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2N3009 (SILICON)
2N3013
2N3013JAN AVAILABLE
2N3014
NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications
MAXIMUM RATINGS
CASE 27
(TO·52)
Collector Connected to Case
Rating
Collector-Emitter Voltage2N3009, 2N3013 2N3014
Collector-Emitter Voltage
Symbol VCEO *
VCES
Collector-Base Voltage
VCB
Emitter-Base Voltage 2N3009
2N3013. 2N3014
YEB
Collector Current - Continuous
IC
(lOlls pulse) Peak
Total Device DiSSiPation@TA • 25'C PD Derate above 25' C
Total Device DiSSipation@TC • 25' C PD
@TC = 100'C
Derate above 2SoC
Operating and Storage Junction Temperature Range
TJ, Tstg
* Applicable from 0.01 mA to 10 mA (Pulsed)
Value
15 20 40
40
4,0 5.0 200 500 0.36 2.06 1.20 0.68 6.
2N3009 Datasheet
