Datasheet Summary
2N3009 (SILICON)
2N3013
2N3013JAN AVAILABLE
2N3014
NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications
MAXIMUM RATINGS
CASE 27
(TO- 52)
Collector Connected to Case
Rating
Collector-Emitter Voltage2N3009, 2N3013 2N3014
Collector-Emitter Voltage
Symbol VCEO
- VCES
Collector-Base Voltage
Emitter-Base Voltage 2N3009
2N3013. 2N3014
Collector Current
- Continuous
(lOlls pulse) Peak
Total Device DiSSiPation@TA
- 25'C PD Derate above 25' C
Total Device DiSSipation@TC
- 25' C PD
@TC = 100'C
Derate above 2SoC
Operating and Storage Junction Temperature Range
TJ, Tstg
- Applicable from 0.01 mA to 10 mA...
