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2N2948 - NPN Transistor

Download the 2N2948 datasheet PDF. This datasheet also covers the 2N2947 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2947-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2947(SILICON) 2N2948 CASE 1 (TO-3) Collector connected to case NPN silicon annular transistors for power amplifier applications to 100 MHz. MAXIMUM RATINGS* Rating Collector- Base Voltage Collector-Emitter Voltage Emitter - Base Voltage Collector- Current (continuous) Base-Current (continuous) Power Input (Nominal) Power Output (Nominal) Total Device Dissipation @ 25 °C Case Temperature Derating Factor above 25 0 C Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC IB P. In P out PD 2N2947 2N2948 60 40 60 40 3.0 2.0 1.5 500 5.0 20.0 25.0 Unit Vdc Vdc Vdc Adc mAdc Watts Watts Watts 167 mWjOC TJ 175 °c Tst!!: -65to+175 °c *The maximum ratings as given for de conditions can be exceeded on a pulse basis. See electrical characteristics.