The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Order this document by MGP20N40CL/D
Advanced Information
SMARTDISCRETES IGBT
™
MGP20N40CL
Internally Clamped, N-Channel
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.