Datasheet4U Logo Datasheet4U.com

1N2163A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

Download the 1N2163A datasheet PDF. This datasheet also covers the 1N2163 variant, as both devices belong to the same temperature-compensated zener reference diodes family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N2163-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
1N216 (1N200 - 1N222) General Purpose Diodes International Semiconductor
1N2160 (1N2xxx) SILICON POWER RECTIFIER Microsemi Corporation
1N210 (1N200 - 1N222) General Purpose Diodes International Semiconductor
1N211 (1N200 - 1N222) General Purpose Diodes International Semiconductor
1N212 (1N200 - 1N222) General Purpose Diodes International Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
1N2163 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
1N2164 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
1N2164A TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
1N2165 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
1N2165A TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. • Low Dynamic Impedance • Choice of Three Temperature Ranges • "Box Method" Specifications Guarantee Maximum Voltage De- viation. Temperature compensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsfC. Reverse biased junctions above 5.
Published: |