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Motorola Electronic Components Datasheet

1N2163A Datasheet

TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

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1N2163 thru 1N2171 (SILICON)
lN2163A thru lN2171A
lN3580, A, Bthru lN3583, A, B
TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
Highly reliable reference sources utilizing an oxide-passivated
junction for long-term voltage stability. Construction consists of
welded hermetically sealed metal and glass case.
• Low Dynamic Impedance
• Choice of Three Temperature Ranges
• "Box Method" Specifications Guarantee Maximum Voltage De-
viation.
Temperature compensated reference diodes are made by taking
advantage of the differing thermal characteristics of forward and
reverse biased silicon PN junctions. A forward biased junction has a
negative temperature coefficient of approximately 2.0 millivoltsfC.
Reverse biased junctions above 5.0 volts have a positive temperature
coefficient and therefore it is possible by judicious selection of
combinations of forward and reverse biased junctions to obtain a
device that shows a very low temperature coefficient due to cancella-
tion. Because of the differing Impedance versus temperature charac-
teristics of the junctions involved, optimum temperature stability is
obtained by operating in the zener current range at which the tempera-
ture coefficient is a minimum.
MAXIMUM RATINGS
Junction Temperature: -56 to +200oC .
Storage Temperature: -66 to +2000 c
DC Power Dissipation: 750 mW @ TA =25°C
MECHANICAL CHARACTERISTICS
CASE: Hermetically sealed. welded metal glass
DIMENSIONS: Sao Outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
and weldable.
POLARITY: Cathode to case
WEIGHT: 1.5 Grams (approx)
MOUNTING POSITION: Any
TEMPERATURE-
COMPENSATED
SILICON ZENER
REFERENCE DIODES
~O'125MAXOIA
1.25
MIN
l:~~.
-.~~--jI0.21 Q.350
CASE 52
(00-13)
1-34


Motorola Electronic Components Datasheet

1N2163A Datasheet

TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

No Preview Available !

lN2163 thru lN2171, lN2163A thru lN2171A,
lN3580, A, B thru lN3583, A, B (continued)
ELECTRICAL CHARACTERISTICS
=z vV 9.4 Volts ± 0.4 I± 0.2 V Suffix "A") @II ZT = 10 rnA)
Type
Number
lN2163.A
1N2164.A
lN2165.A
lN2166.A
lN2167.A
lN2168.A
lN2169.A
lN2170.A
lN2171.A
Max
Voltage
Change
INote 1)
6VZ IVolts)
Test
Temperature$'
°c
Temperature
Coefficient
INote 1)
%IOC
0.033
0.086
0.115
0.007
0.017
0.023
0.004
0.009
0.012
0, +25, +70
-55, D, +25,
+75, +125
-55, D, +25,
+75, +125, +185
0, +25, +70
-55,0, +25,
+75, +125
-55,0, +25,
+75, +125, +185
D, +25, +70
-55,0, +25,
+75, +125
-55,0, +25,
+75, +125, +185
0.005
0.005
0.005
0.001
0.001
0.001
0.a005
0.0005
0.0005
ELECTRICAL CHARACTERISTICS
Max Dynamic
Impedance
(Note 21
ZZT (Ohms)
15
15
15
Vz '" 11.7 Volts ± 5.0% (lZT '" 7.5 mAl
Type
Number
Max
Voltage
Change
(Note 1)
6VZ (Volts)
Test
Temperatures
°c
Temperature
Coefficient
(Note 1)
%loC
Max Dynamic
Impedance
INote 21
ZZT (Ohms)
lN3580
1N3581
lN3582
lN3583
lN3580A
lN3581A
lN3582A
lN3583A
lN3580B
lN3581B
1N3582B
lN3583B
0.088
0.044
0.018
0.009
0.181
0.090
0.036
0.018
0.239
0.120
0.048
0.024
0, +25, +75
·55,0, +25,
+75, +100
-55, 0, +25
+75, +100, +150
0.01
0.005
0.002
0.001
0.01
0.005
0.002
0.001
0.01
0.005
0.002
0.001
25
25
25
NOTE 1:
Voltage Variation (6.V Z) and Temperature Coefficient.
All reference diodes are characterized by the "box method". This
guarantees a maximum voltage variation (6.VZ) over the specified
temperature range, at the specified test current (lZT)' verified by
ztests at indicated temperature points within the range. V is
measured and recorded at each temperature specified. The 6VZ
between the highest and lowest values must not exceed the
maximum 6V Z given.
This method of indicating voltage stability is now used for JEDEC
registration as well as for military qualification. The former method
of indicating voltage stability - by means of temperature co~
efficient - accurately reflects the voltage deviation at the tem~
perature extremes, but is not necessarily accurate within the
temperature range because reference diodes have a nonlinear
temperature relationship. The temperature coefficient, therefore,
is given only as a reference.
NOTE 2:
The dynamic zener impedance, ZZT' is derived from the 60~Hz ac
voltage drop which results when an ac current with an rms value
equal to 10% of the dc zener current, IZT' is superimposed on Izr
A cathode~ray tube curve~trace test on a sample basis is used to en~
sure that the zener has a sharp and stable knee region.
IN2382thru IN2385
For Specifications, See IN1730 Data.
IN2498 thru IN2500
CASE 56
(DO-4)
Recommended for applications requiring an exact re-
placement only. For new designs and for industry pre-
ferred replacement devices, see IN2970 series.
IN2609 thru IN2617
Obsolete, discontinued types, replace with devices from the IN4001 series.
1-35


Part Number 1N2163A
Description TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
Maker Motorola
Total Page 2 Pages
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