1N2163 Datasheet | Motorola Semiconductor

1N2163 thru 1N2171 (SILICON) l N2163A thru l N2171A l N3580, A, Bthru l N3583, A, B TEMPERATURE-PENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. - Low Dynamic Impedance - Choice of Three Temperature Ranges - "Box Method" Specifications Guarantee Maximum Voltage De- viation. Temperature pensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsf C. Reverse biased junctions above 5.0 volts have a positive temperature coefficient and therefore it is possible by judicious selection of binations of forward and reverse biased junctions to obtain a device that shows a very low temperature coefficient due to cancellation. Because of the differing Impedance versus temperature characteristics of the junctions involved, optimum temperature stability is obtained by operating in the zener current range at which the temperature coefficient is a minimum. MAXIMUM RATINGS Junction Temperature: -56 to +200o C . Storage Temperature: -66 to +2000 c DC Power Dissipation: 750 m W @ TA =25°C MECHANICAL CHARACTERISTICS CASE: Hermetically sealed. welded metal glass DIMENSIONS: Sao Outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable and weldable. POLARITY: Cathode to case WEIGHT: 1.5 Grams (approx) MOUNTING POSITION: Any TEMPERATUREPENSATED SILICON ZENER REFERENCE DIODES ~O'125MAXOIA 1.25 MIN l:~~. -.~~--j I 0.21 Q.350 CASE 52 (00-13) 1-34 l N2163 thru l N2171, l N2163A thru l N2171A, l N3580, A, B thru l N3583, A, B (continued) ELECTRICAL CHARACTERISTICS = z v V 9.4 Volts ± 0.4 I± 0.2 V Suffix "A") @II ZT = 10 rn A) Type Number l N2163.A 1N2164.A l N2165.A l N2166.A l N2167.A l N2168.A l...