S50D30 Datasheet | Mospec Semiconductor

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 125 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In pliance with EU Ro Hs 2002/95/EC directives S50D30 Thru S50D60 SCHOTTKY BARRIER RECTIFIERS 50 AMPERES 30-60 VOLTS TO-3P MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Per diodes Total Device (Rated VR),TC=100 Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) S50D Symbol 30 35 40 45 50 60 Unit VRRM VRWM 30 35 40 45 50 60 VR(RMS) 21 25 28 32 35 42 IF(AV) IFM 25 50 Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM Operating and Storage Junction Temperature Range TJ , TSTG -65 to +125 THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθ...