S20C30 Datasheet | Mospec Semiconductor

features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 4KV(Min.) Human-Body Model In pliance with EU Ro Hs 2002/95/EC directives S20C30 thru S20C60 SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 30-60 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Symbol 30 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM RMS Reverse Voltage VR(RMS) 21 Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR), TC=125 IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , Tstg S20C 35 40 45 50 60 35 40 45 50 60 25 28 32 35 42 10 20 20 -65 to +150 Unit V V A A A THERMAL RESISTANCES Typical Thermal Resistance junction to case Per diode Total Coupling Rθjc Rθ c 3.8 3.4 3.0 /w MILLIMETERS MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06...