RD20HMF1 transistor equivalent, silicon mosfet power transistor.
1
6.6+/-0.3
APPLICATION
For output stage of high power amplifiers in 900MHz band Mobile radio sets.
3.0+/-0.4
5.1+/-0.5
PIN 1.Drain 2.Source 3.Gate UNIT:mm
RoHS COM.
7.2+/-0.5
OUTLINE
DRAWING
22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900.
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.
7.2+/-0.5
OUTLINE
DRAWING
22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: .
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