RA80H1415M1 modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
* Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz,
VDD=12.5V, VGG=5V, Pin=50mW <.
The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain c.
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