RA45H4047M Datasheet PDF - Mitsubishi Electric Semiconductor MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Specs

RA45H4047M - MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO

Datasheet Summary

Description

The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 400-470MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power.

Datasheet Details

Part number	RA45H4047M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	93.33 KB
Description	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
Datasheet	RA45H4047M Datasheet
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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).

Published: Apr 16, 2005 |