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RA07M1317M Datasheet Silicon RF Power Modules

Manufacturer: Mitsubishi Electric

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General Description

The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.

Overview

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M BLOCK DIAGRAM 2 3 135-175MHz 6.5W 7.2V, 2 Stage Amp.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V).
  • Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW.
  • ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20mW.
  • Broadband Frequency Range: 135-175MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
  • Module Size: 30 x 10 x 5.4 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5.

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