RA07M1317M Datasheet | Mitsubishi Electric

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS BLOCK DIAGRAM 2 3 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 d B. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power bees available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 m A. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. Features - Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V) - Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20m W - ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20m W - Broadband Frequency Range: 135-175MHz - Low-Power Control Current IGG=1m A (typ) at VGG=3.5V - Module Size: 30 x 10 x 5.4 mm - Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S ORDERING INFORMATION: ORDER NUMBER RA07M1317M-E01 RA07M1317M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 25 modules/tray MITSUBISHI ELECTRIC 1/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RATING 9.2 4 30 10 -30 to +90 -40 to +110 UNIT V...