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RA07M1317M Datasheet

Manufacturer: Mitsubishi Electric
RA07M1317M datasheet preview

Datasheet Details

Part number RA07M1317M
Datasheet RA07M1317M_MitsubishiElectricSemiconductor.pdf
File Size 573.13 KB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA07M1317M page 2 RA07M1317M page 3

RA07M1317M Overview

The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.

RA07M1317M Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)
  • Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
  • ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20mW
  • Broadband Frequency Range: 135-175MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
  • Module Size: 30 x 10 x 5.4 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
  • packed without desiccator)
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