RA07M1317M modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)
* Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
* ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=.
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V G.
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