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Mitsubishi Electric Semiconductor

PSS20S71F6 Datasheet Preview

PSS20S71F6 Datasheet

Dual-In-Line Package Intelligent Power Module

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< Dual-In-Line Package Intelligent Power Module >
PSS20S71F6
TRANSFER MOLDING TYPE
INSULATED TYPE
OUTLINE
MAIN FUNCTION AND RATINGS
3 phase DC/AC inverter
600V / 20A (CSTBT)
N-side IGBT open emitter
Built-in bootstrap diodes with current limiting resistor
APPLICATION
AC 100~240Vrms(DC voltage:400V or below) class
low power motor control
TYPE NAME
PSS20S71F6
With temperature output function
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
For P-side
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
Temperature output : Outputting LVIC temperature by analog signal
Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
UL Recognized : UL1557 File E80276
INTERNAL CIRCUIT
VUFB(1)
VUFB(3)
VP1(4)
UP(6)
VVFS(7)
VVFB(9)
VP1(10)
VP(12)
VWFS(13)
VWFB(15)
VP1(16)
WP(18)
VOT(20)
UN(21)
VN(22)
WN(23)
FO(24)
CFO(25)
CIN(26)
VNC(27)
VN1(28)
HVIC1
HO
HVIC2
HO
HVIC3
HO
LVIC
UOUT
VOUT
WOUT
IGBT1
Di1
DIPIPM
P(37)
U(36)
IGBT2
Di2
V(35)
IGBT3
Di3
IGBT4
Di4
IGBT5
Di5
IGBT6
Di6
W(34)
NU(33)
NV(32)
NW(31)
Publication Date : December 2013
1




Mitsubishi Electric Semiconductor

PSS20S71F6 Datasheet Preview

PSS20S71F6 Datasheet

Dual-In-Line Package Intelligent Power Module

No Preview Available !

< Dual-In-Line Package Intelligent Power Module >
PSS20S71F6
TRANSFER MOLDING TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Applied between P-NU,NV,NW
Applied between P-NU,NV,NW
TC= 25°C
TC= 25°C, less than 1ms
TC= 25°C, per 1 chip
Ratings
450
500
600
20
40
76.9
-20~+150
Unit
V
V
V
A
A
W
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
VD Control supply voltage
VDB Control supply voltage
VIN Input voltage
VFO Fault output supply voltage
IFO Fault output current
VSC Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
TC Module case operation temperature
Tstg Storage temperature
Viso Isolation voltage
Fig. 1: TC MEASUREMENT POINT
Condition
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
Measurement point of Tc is provided in Fig.1
60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate
Control terminals
Ratings
20
20
-0.5~VD+0.5
-0.5~VD+0.5
1
-0.5~VD+0.5
Ratings
400
-20~+100
-40~+125
2500
Unit
V
V
V
V
mA
V
Unit
V
°C
°C
Vrms
17.7mm
18mm
IGBT chip position
FWDi chip position
Power terminals
Groove
Tc point
Heat sink side
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max.
Unit
Rth(j-c)Q
Rth(j-c)F
Junction to case thermal
resistance (Note 1)
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
- - 1.3 K/W
- - 3.0 K/W
Note 1: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : December 2013
2


Part Number PSS20S71F6
Description Dual-In-Line Package Intelligent Power Module
Maker Mitsubishi Electric Semiconductor
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