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PD8XX3 - InGaAs AVALANCHE PHOTO DIODES

General Description

PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.

Key Features

  • φ35 µ m active diameter.
  • Low noise.
  • High speed response.
  • Small dark current.
  • High quantum efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 FEATURES • φ35 µ m active diameter • Low noise • High speed response • Small dark current • High quantum efficiency DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications.