logo

MGFS36E3436A Datasheet Mitsubishi Electric Semiconductor

Download Datasheet
Mitsubishi Electric Semiconductor · MGFS36E3436A File Size : 189.16KB · 3 hits

Features and Benefits











• InGaP HBT Device 6V Operation 30dB Linear Gain 2.5% EVM at an Output power of 25dBm 4% EVM at an Output power of 27dBm Integrated Output Power Detector Integrated 1-bit 21dB Step A.

MGFS36E3436A MGFS36E3436A MGFS36E3436A
TAGS
3.4-3.6GHz
HBT
HYBRID
MGFS36E3436A
MGFS36E2325
MGFS36E2527

Stock and Price

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy