MGFC47B3538B fet equivalent, c band internally matched power gaas fet.
Crass AB operation Internally matched to 50(ohm)
* High output power: Po(SAT) = 50 W (typ.)
* High power gain: GP = 10 dB (TPE.) @Po = 37dBm
* Distortion: EVM.
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5
– 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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