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MGFC42V7177 Datasheet, Mitsubishi Electric Semiconductor

MGFC42V7177 fet equivalent, c band internally matched power gaas fet.

MGFC42V7177 Avg. rating / M : 1.0 rating-11

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MGFC42V7177 Datasheet

Features and benefits

Crass A operation Internally matched to 50(ohm)
* High output power: P1dB = 16 W (typ.) @ P1dB
* High power gain: GLP = 8.0 dB (typ.)
* High power added effic.

Application


* item 01 : 7.1
  – 7.7GHz band power amplifier
* item 51 : 7.1
  – 7.7GHz band digi.

Description

The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1
  – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Int.

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MGFC42V7177 Page 1 MGFC42V7177 Page 2

TAGS

MGFC42V7177
band
Internally
Matched
Power
GaAs
FET
Mitsubishi Electric Semiconductor

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