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MGF4963BL - Low Noise GaAs HEMT

General Description

The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Key Features

  • Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) Fig.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4963BL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.