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MGF4963BL Datasheet, Mitsubishi Electric Semiconductor

MGF4963BL hemt equivalent, low noise gaas hemt.

MGF4963BL Avg. rating / M : 1.0 rating-13

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MGF4963BL Datasheet

Features and benefits

Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG.

Description

The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.) High associated gain @ f=20GHz Gs = 13.5dB (Typ.) Fi.

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TAGS

MGF4963BL
Low
Noise
GaAs
HEMT
MGF4961B
MGF4964BL
MGF4910D
Mitsubishi Electric Semiconductor

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