MGF4941CL package equivalent, micro-x type plastic package.
Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.)
Fig.1
APPLICATION
K band low noise amplifiers
QUALITY GRADE
GG
.
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified.
Outline Drawing
FEATURES
Low noise figure @ f=25.2G.
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