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MGF4931AM Datasheet, Mitsubishi Electric Semiconductor

MGF4931AM hemt equivalent, super low noise ingaas hemt.

MGF4931AM Avg. rating / M : 1.0 rating-13

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MGF4931AM Datasheet

Features and benefits

Low noise figure @ f=12GHz NFmin. = 0.6dB (Typ.) High associated gain @ f=12GHz Gs = 11.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise ampli.

Application

Please be aware, however, that the technical information contained in these materials does not comprise consent for the.

Description

The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12.

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TAGS

MGF4931AM
SUPER
LOW
NOISE
InGaAs
HEMT
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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