logo

MGF4921AM Datasheet, Mitsubishi Electric Semiconductor

MGF4921AM hemt equivalent, super low noise ingaas hemt.

MGF4921AM Avg. rating / M : 1.0 rating-12

datasheet Download (294.75KB)

MGF4921AM Datasheet

Features and benefits

Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 .

Description

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure .

Image gallery

MGF4921AM Page 1 MGF4921AM Page 2 MGF4921AM Page 3

TAGS

MGF4921AM
SUPER
LOW
NOISE
InGaAs
HEMT
MGF4910D
MGF4910E
MGF4914D
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts