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M54561P Datasheet, Mitsubishi Electric Semiconductor

M54561P array equivalent, 7-unit 300ma source type darlington transistor array.

M54561P Avg. rating / M : 1.0 rating-12

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M54561P Datasheet

Features and benefits

High breakdown voltage (BVCEO ≥ 40V) q High-current driving (Io(max) =
  –300mA) q With output clamping diodes q Active “L” input q Wide operating temperatu.

Description

M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATIO.

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TAGS

M54561P
7-UNIT
300mA
SOURCE
TYPE
DARLINGTON
TRANSISTOR
ARRAY
Mitsubishi Electric Semiconductor

Manufacturer


Mitsubishi Electric Semiconductor

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