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FX6ASJ-2 Mitsubishi Electric Semiconductor HIGH-SPEED SWITCHING USE

Mitsubishi Electric Semiconductor
Description P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX6ASJ-2 HIGH-SPEED SWITCHING USE FX6ASJ-2 OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 • 4V DRIVE • VDSS ....
Features
  –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T amet...

Datasheet PDF File FX6ASJ-2 Datasheet 45.84KB

FX6ASJ-2   FX6ASJ-2   FX6ASJ-2  




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