CR02AM Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 12.5 MIN 5.0 MAX 0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 0.23 1 3 2 - IT (AV) 0.3A - VDRM 200V/300V/400V - IGT 100µ A JEDEC : TO-92 APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 4 200 300 160 200 160 6 300 400 240 300 240 8 400 500 320 400 320 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg - Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions mercial frequency, sine half wave, 180° conduction, Ta=30° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value - 40 ~ +125 - 40 ~ +125 V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 3.9 MAX Unit V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 LOW POWER USE PLANAR PASSIVATION...