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Mitsubishi Electric Semiconductor

CM100TU-12H Datasheet Preview

CM100TU-12H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
EH
A
B
F
EH
G
ER
S(4 - Mounting
Holes)
K
L
GuP
C EuP
D
TC
Measured
Point
GvP
EvP
GwP
EwP
GuN
EuN
GvN
EvN
TC
Measured
Point
GwN
M
EwN
u vw
5 - M4 NUTS
K
JJ
N
EH E H E
TAB#110 t=0.5
P
Q
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
Dimensions Inches
A 4.02
B 3.15±0.01
C 3.58
D 2.91±0.01
E 0.43
F 0.79
G 0.39
H 0.75
J 0.79
Millimeters
102.0
80.0±0.25
91.0
74.0±0.25
11.0
20.0
10.0
19.1
20.0
GwN
EwN
Dimensions Inches
K 0.05
L 0.74
M 1.55
N 0.12
P 0.32
Q 1.02
R 0.47
S 0.22 Dia.
Millimeters
1.25
18.7
39.3
3.05
8.1
26.0
11.85
5.5 Dia.
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12H is a
600V (VCES), 100 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
12
Sep.1998




Mitsubishi Electric Semiconductor

CM100TU-12H Datasheet Preview

CM100TU-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C)
Mounting Torque, M4 Main Terminal
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
CM100TU-12H
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
1.3 ~ 1.7
Mounting Torque, M5 Mounting
– 2.5 ~ 3.5
Weight
– 570
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
VCE(sat)
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
4.5
IC = 100A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGE = 15V
Emitter-Collector Voltage*
VEC
IE = 100A, VGE = 0V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
6
2.4
2.6
200
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
Min.
Typ.
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
Units
nF
nF
nF
ns
ns
ns
ns
µC
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/6 Module
Thermal Resistance, Junction to Case
Rth(j-c)D
Per Free-Wheel Diode 1/6 Module
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
Typ.
0.018
Max.
0.31
0.7
Units
°C/W
°C/W
°C/W
Sep.1998


Part Number CM100TU-12H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100TU-12H Datasheet PDF






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