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Mitsubishi Electric Semiconductor

CM100TU-12F Datasheet Preview

CM100TU-12F Datasheet

IGBT Module

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CM100TU-12F
MITSUBISHI IGBT MODULES
CM100TU-12F
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102
80 ±0.25
20
10
10
CM
N
P
GuP
EuP
GvP
EvP
GwP
EwP
11 19.1 11 19.1 11 11.85
GE
GE
GE
GE
U
GE
GE
VW
4–φ5.5
MOUNTING HOLES
GuN
EuN
GvN
EvN
GwN
EwN
(4)
5–M4NUTS
Tc measured point
2.8
10 10 10
20 20
3.05
11 19.1 11 19.1 11
Tc measured point
4P
GUP
RTC
LABEL
EUP U
GUN
RTC
EUN
N
29
+1
–0.5
GVP
RTC
EVP V
GVN
RTC
EVN
GWP
RTC
EWP W
GWN
RTC
EWN
CIRCUIT DIAGRAM
Aug. 1999




Mitsubishi Electric Semiconductor

CM100TU-12F Datasheet Preview

CM100TU-12F Datasheet

IGBT Module

No Preview Available !

MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
Main terminal to base plate, AC 1 min.
Main Terminal M4
Mounting holes M5
Typical value
MITSUBISHI IGBT MODULES
CM100TU-12F
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
600
±20
100
200
100
200
350
–40 ~ +150
–40 ~ +125
2500
1.3 ~ 1.7
2.5 ~ 3.5
570
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
Parameter
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Min.
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V
5
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 100A, VGE = 15V
VCC = 300V, IC = 100A
VGE1 = VGE2 = 15V
RG = 6.3, Inductive load switching operation
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied*2 (1/6 module)
Tc measured point is just under the chips
6.3
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Limits
Typ.
6
1.6
1.6
620
1.9
0.11
Max.
1
Unit
mA
7
20
2.2
27
1.8
1
100
80
300
250
150
2.6
0.35
0.70
0.28V3
63
V
µA
V
nF
nC
ns
ns
µC
V
°C/W
Aug. 1999


Part Number CM100TU-12F
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100TU-12F Datasheet PDF






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