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CM100TF-28H - IGBT Module

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM100TF-28H

Datasheet Details

Part number CM100TF-28H
Manufacturer Mitsubishi Electric Semiconductor
File Size 53.18 KB
Description IGBT Module
Datasheet download datasheet CM100TF-28H Datasheet
Additional preview pages of the CM100TF-28H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.) S N G u P Eu P G v P Ev P G wP EwP P R L C N P P G u N Eu N G v N Ev N G wN EwN J U N V W A E T G F K U AA M M M M AA Y - DIA. (4 TYP.) TAB #110, t = 0.5 H V P GuP EuP U GvP EvP V GwP EwP W GwN EwN N P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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