900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Mitsubishi Electric Semiconductor

CM100TF-28H Datasheet Preview

CM100TF-28H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z - M5 THD
(7 TYP.)
J
K
B
D
X QX QX N
S
GuP EuP
GvP EvP
GwP EwP
P GuN EuN
GvN EvN
GwN EwN
P
N
UVW
N
RL
P
CA
E
T GF
U
MM
M
AA Y - DIA.
AA M (4 TYP.)
TAB #110, t = 0.5
H
P
GuP
EuP
U
GuN
EuN
N
V
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.21
4.02
3.54±0.01
3.15±0.01
2.01
1.38
1.28
1.26 Max.
1.18
0.98
0.96
0.79
0.67
Millimeters
107.0
102.0
90.0±0.25
80.0±0.25
51.0
35.0
32.5
32.0 Max
30.0
25.0
24.5
20.0
17.0
Dimensions
P
Q
R
S
T
U
V
X
Y
Z
AA
Inches
0.57
0.55
0.47
0.43
0.39
0.33
0.30
0.24
0.22
M5 Metric
0.08
Millimeters
14.5
14.0
12.0
11.0
10.0
8.5
7.5
6.0
5.5
M5
2.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-28H
is a 1400V (VCES), 100 Ampere
Six-IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
28
Sep.1998




Mitsubishi Electric Semiconductor

CM100TF-28H Datasheet Preview

CM100TF-28H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
ICES
IGES
VGE(th)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
Total Gate Charge
VCE(sat)
QG
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
VCC = 800V, IC = 100A, VGE = 15V
Emitter-Collector Voltage
VEC IE = 100A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
CM100TF-28H
–40 to 150
–40 to 125
1400
±20
100
200*
100
200*
780
1.47 ~ 1.96
1.47 ~ 1.96
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Min. Typ. Max. Units
– – 1.0 mA
– – 0.5 µA
5.0 6.5 8.0 Volts
– 3.1 4.2** Volts
– 2.95 – Volts
– 510 –
nC
– – 3.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0V, VCE = 10V
– – 20 nF
––
7 nF
––
4 nF
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 800V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 3.1
IE = 100A, diE/dt = –200A/µs
IE = 100A, diE/dt = –200A/µs
– – 250 ns
– – 400 ns
– – 300 ns
– – 500 ns
– – 300 ns
– 1.0 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Rth(j-c)
Rth(j-c)
Per IGBT
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
Typ. Max. Units
– 0.16 °C/W
– 0.35 °C/W
– 0.025 °C/W
Sep.1998


Part Number CM100TF-28H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
PDF Download

CM100TF-28H Datasheet PDF






Similar Datasheet

1 CM100TF-28H IGBT Module
Mitsubishi Electric Semiconductor
2 CM100TF-28H IGBT Module
Powerex Power Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy