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Mitsubishi Electric Semiconductor

CM100TF-12H Datasheet Preview

CM100TF-12H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM100TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z - M4 THD
(7 TYP.)
P
D
G
N
UN
A
C
X QX QX
N
S
GuP E uP
GvP E vP
GwP E wP
GuN E uN
GvN E vN
GwN E wN
UVW
PP
GB
N
R
E
T KJ
AA
L
TAB #110, t = 0.5
M M AA
L
FH
Y DIA. (4 TYP.)
V
AB
GuP
P
EuP
GvP
EvP
GwP
EwP
P
GuN
EuN
U
N
GvN
EvN
V
Outline Drawing and Circuit Diagram
GwN
EwN
W
Dimensions Inches
Millimeters
A
4.02±0.02
102±0.5
B
3.58±0.02
91.0±0.5
C
3.15±0.01
80.0±0.25
D
2.913±0.01
74.0±0.25
E 1.69 43.0
F 1.18+0.06/-0.02 30.0+1.5/-0.5
G 1.18 30.0
H 1.16 29.5
J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0
Dimensions Inches
P 0.65
Q 0.55
R 0.47
S 0.43
T 0.39
U 0.33
V 0.32
X 0.24
Y 0.22 Dia.
Z M4 Metric
AA 0.08
AB 0.28
N
Millimeters
16.5
14.0
12.0
11.0
10.0
8.5
8.1
6.0
Dia. 5.5
M4
2.0
7.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (VCES), 100 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM 100
12
Sep.1998




Mitsubishi Electric Semiconductor

CM100TF-12H Datasheet Preview

CM100TF-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)
Mounting Torque, M4 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM100TF-12H
–40 to 150
–40 to 125
600
±20
100
200*
100
200*
400
0.98 ~ 1.47
1.47 ~ 1.96
540
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 300V, IC = 100A, VGE = 15V
Emitter-Collector Voltage
VEC IE = 100A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0V, VCE = 10V
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V, RG = 6.3
IE = 100A, diE/dt = –200A/µs
IE = 100A, diE/dt = –200A/µs
Min.
4.5
Min.
Typ.
6.0
2.1
2.15
300
Max.
1.0
0.5
7.5
2.8**
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Typ.
0.27
Max.
10
3.5
2
120
300
200
300
110
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Typ. Max.
– 0.31
– 0.70
– 0.033
Units
°C/W
°C/W
°C/W
Sep.1998


Part Number CM100TF-12H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100TF-12H Datasheet PDF






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