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Mitsubishi Electric Semiconductor

CM100E3U-24H Datasheet Preview

CM100E3U-24H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM100E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
E
A
B
FG
H
D
C
C2E1 E2
C1
J
2 - Mounting
Holes
L (6.5 Dia.)
V
U
3-M5 Nuts
O
P
R
MN
O
QP
TAB #110 t = 0.5
S
T
C2E1
E2
E2
G2
C1
Outline Drawing and Circuit Diagram
Dimensions Inches
A 3.7
B 3.15±0.01
C 1.89
D 0.94
E 0.28
F 0.67
G 0.91
H 0.91
J 0.43
L 0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
4.0
Dimensions Inches
Millimeters
M 0.47
12.0
N 0.53 13.5
O 0.1
2.5
P 0.63 16.0
Q 0.98
25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3
7.5
T 0.83 21.2
U 0.16
4.0
V 0.51 13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Application:
ٗ Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM100E3U-24H is a
1200V (VCES), 100 Ampere IGBT
Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
24
Sep.1998




Mitsubishi Electric Semiconductor

CM100E3U-24H Datasheet Preview

CM100E3U-24H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100E3U-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
1200
±20
100
200*
100
200*
650
2.5 ~ 3.5
Mounting Torque, M6 Mounting
– 3.5 ~ 4.5
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
ICES
IGES
VGE(th)
VCE(sat)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
4.5
6
2.9
Total Gate Charge
Emitter-Collector Voltage**
IC = 100A, VGE = 15V, Tj = 125°C
2.85
QG
VCC = 600V, IC = 100A, VGE = 15V
375
VEC
IE = 100A, VGE = 0V
––
Emitter-Collector Voltage
VFM
IF = 100A, Clamp Diode Part
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Cies
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cres
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
VCC = 600V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 3.1, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
IF = 100A, Clamp Diode Part
diF/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
0.55
0.55
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.7
3.2
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
Max.
15
5
3
100
200
300
350
300
300
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Sep.1998


Part Number CM100E3U-24H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100E3U-24H Datasheet PDF






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