MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100E3U-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
2.5~3.5
Mounting Torque, M6 Mounting
– 3.5~4.5
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
ICES
IGES
VGE(th)
VCE(sat)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
–
–
4.5
–
– 1 mA
– 0.5 µA
6 7.5 Volts
2.4 3.0 Volts
Total Gate Charge
Emitter-Collector Voltage**
QG
VEC
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
–
–
–
2.6
200
–
– Volts
– nC
2.6 Volts
Emitter-Collector Voltage
VFM
IF = 100A, Clamp Diode Part
–
– 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Cies
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cres
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3Ω, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
IF = 100A, Clamp Diode Part
diF/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.24
–
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
–
160
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Sep.1998
