900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Mitsubishi Electric Semiconductor

CM100E3U-12H Datasheet Preview

CM100E3U-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
E
A
B
FG
H
D
C
C2E1 E2
C1
J
2 - Mounting
Holes
L (6.5 Dia.)
V
U
3-M5 Nuts
O
P
R
MN
O
QP
TAB#110 t=0.5
S
T
C2E1
E2
E2
G2
C1
Outline Drawing and Circuit Diagram
Dimensions Inches
A 3.7
B 3.15±0.01
C 1.89
D 0.94
E 0.28
F 0.67
G 0.91
H 0.91
J 0.43
L 0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
4.0
Dimensions Inches
Millimeters
M 0.47
12.0
N 0.53 13.5
O 0.1
2.5
P 0.63 16.0
Q 0.98
25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3
7.5
T 0.83 21.2
U 0.16
4.0
V 0.51 13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Application:
ٗ Brake
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100E3U-12H is a
600V (VCES), 100 Ampere IGBT
Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
12
Sep.1998




Mitsubishi Electric Semiconductor

CM100E3U-12H Datasheet Preview

CM100E3U-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100E3U-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
2.5~3.5
Mounting Torque, M6 Mounting
– 3.5~4.5
Weight
– 310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
ICES
IGES
VGE(th)
VCE(sat)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
4.5
– 1 mA
– 0.5 µA
6 7.5 Volts
2.4 3.0 Volts
Total Gate Charge
Emitter-Collector Voltage**
QG
VEC
IC = 100A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IE = 100A, VGE = 0V
2.6
200
– Volts
– nC
2.6 Volts
Emitter-Collector Voltage
VFM
IF = 100A, Clamp Diode Part
– 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Cies
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cres
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
IF = 100A, Clamp Diode Part
diF/dt = -200A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
0.24
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
160
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Sep.1998


Part Number CM100E3U-12H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
PDF Download

CM100E3U-12H Datasheet PDF






Similar Datasheet

1 CM100E3U-12H IGBT Module
Mitsubishi Electric Semiconductor
2 CM100E3U-12H IGBT Module
Powerex Power Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy