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Mitsubishi Electric Semiconductor

CM100DUS-12F Datasheet Preview

CM100DUS-12F Datasheet

IGBT MODULES

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MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
CM100DUS-12F
Dual (Half-Bridge)
- 4th generation Fast switching IGBT module -
Collector current IC .............…............…
Collector-emitter voltage VCES ...........…
Maximum junction temperature Tjmax ...
Flat base Type
100A
600V
1 5 0 °C
Copper base plate
RoHS Directive compliant
UL Recognized under UL1557, File E323585
APPLICATION
High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
INTERNAL CONNECTION
C2E1
Tr2
RTC
Di2
E2
Di1
RTC
C1
Tr1
1 February-2011




Mitsubishi Electric Semiconductor

CM100DUS-12F Datasheet Preview

CM100DUS-12F Datasheet

IGBT MODULES

No Preview Available !

MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
Ptot'
IE
IERM
(Note.1)
(Note.1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
C-E short-circuited
TC=25 °C (Note.2)
Pulse, Repetitive (Note.4)
TC=25 °C
TC'=25 °C
TC=25 °C
(Note.2, 5)
(Note.3, 5)
(Note.2)
Pulse, Repetitive (Note.4)
T j Junction temperature
T s t g Storage temperature
-
-
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Conditions
ICES
IGES
VGE(th)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCEsat
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note.1)
EC
t (Note.1)
rr
Q (Note.1)
rr
Eon
Eoff
E (Note.1)
rr
rg
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
VCE=VCES, G-E short-circuited
±VGE=VGES, C-E short-circuited
IC=10 mA, VCE=10 V
IC=100 A ,(Note.6)
T j =25 °C
VGE=15 V
T j =125 °C
VCE=10 V, G-E short-circuited
VCC=300 V, IC=100 A, VGE=15 V
VCC=300 V, IC=100 A, VGE=±15 V,
RG=6.3 , Inductive load
IE=100 A (Note.6) , G-E short-circuited
VCC=300 V, IE=100 A, VGE=±15 V,
RG=6.3 , Inductive load
VCC=300 V, IC=IE=100 A,
VGE=±15 V, RG=6.3 , T j =125 °C,
Inductive load
Per switch
THERMAL RESISTANCE CHARACTERISTICS
Min.
-
-
5
1.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
Item
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Rth(j-c')Q
Rth(j-c')D
Thermal resistance (Note.2)
Contact thermal resistance (Note.2)
Thermal resistance (Note.3)
Conditions
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied (Note.7)
Junction to case, per IGBT
Junction to case, per FWDi
Min.
-
-
-
-
-
MECHANICAL CHARACTERISTICS
Symbol
Item
M t Mounting torque
Ms
m Weight
e c Flatness of base plate
Conditions
Main terminals
M 5 screw
Mounting to heat sink M 6 screw
-
On the centerline X, Y (Note.8)
Min.
2.5
3.5
-
-100
Rating
600
±20
100
200
350
445
100
200
-40 ~ +150
-40 ~ +125
2500
Limits
Typ.
-
-
6
2.0
1.95
-
-
-
620
-
-
-
-
2.0
-
1.9
1.55
2.2
1.2
0
Max.
1
20
7
2.7
-
27
1.8
1.0
-
100
80
300
150
2.6
150
-
-
-
-
-
Limits
Typ.
-
-
0.07
-
-
Max.
0.35
0.70
-
0.28
0.40
Limits
Typ.
3.0
4.0
310
-
Max.
3.5
4.5
-
+100
Unit
V
V
A
W
A
°C
V
Unit
mA
μA
V
V
nF
nC
ns
V
ns
μC
mJ
Unit
K/W
K/W
K/W
K/W
K/W
Unit
N·m
g
μm
2 February-2011


Part Number CM100DUS-12F
Description IGBT MODULES
Maker Mitsubishi Electric Semiconductor
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