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Mitsubishi Electric Semiconductor

CM100BU-12H Datasheet Preview

CM100BU-12H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM100BU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
FG
EH E
R
S(4 - Mounting
Holes)
L
GuP
C EuP
D TC
Measured
Point
GvP
EvP
U
GuN
EuN
V
M
TC Measured
Point
P
GvN
EvN
Q
4 - M4 NUTS
JJ
EH
K
FG
VWV
L
N
TAB#110 t=0.5
T
U
X
P
GuP
EuP
U
GvP
EvP
V
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches
A 2.83
B 2.17±0.01
C 3.58
D 2.91±0.01
E 0.43
F 0.79
G 0.69
H 0.75
J 0.39
K 0.41
L 0.05
Millimeters
72.0
55±0.25
91.0
74.0±0.25
11.0
20.0
17.5
19.1
10.0
10.5
1.25
GvN
EvN
Dimensions Inches
M 0.74
N 0.02
P 1.55
Q 0.63
R 0.57
S 0.22 Dia.
T 0.32
U 1.02
V 0.59
W 0.20
X 1.61
Millimeters
18.7
0.5
39.3
16.0
14.4
5.5 Dia.
8.1
26.0
15.0
5.0
41.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of four
IGBTs in an H-Bridge configura-
tion, with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (VCES), 100 Ampere Four-
IGBT Module.
Type
CM
Current Rating
Amperes
100
VCES
Volts (x 50)
12
Sep.1998




Mitsubishi Electric Semiconductor

CM100BU-12H Datasheet Preview

CM100BU-12H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM100BU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M4 Main Terminal
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
CM100BU-12H
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
1.3 ~ 1.7
Mounting Torque, M5 Mounting
– 2.5 ~ 3.5
Weight
– 390
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
VCE(sat)
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V, Tj = 25°C
4.5
IC = 100A, VGE = 15V, Tj = 125°C
Total Gate Charge
Emitter-Collector Voltage*
QG
VCC = 300V, IC = 100A, VGE = 15V
VEC
IE = 100A, VGE = 0V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
6
2.4
2.6
200
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 300V, IC = 100A,
VGE1 = VGE2 = 15V,
RG = 6.3, Resistive
Load Switching Operation
IE = 100A, diE/dt = -200A/µs
IE = 100A, diE/dt = -200A/µs
Min.
Typ.
0.24
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
8.8
4.8
1.3
100
250
200
300
160
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/4 Module
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/4 Module
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
Typ.
0.025
Max.
0.31
0.7
Units
°C/W
°C/W
°C/W
Sep.1998


Part Number CM100BU-12H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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CM100BU-12H Datasheet PDF






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