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Mitsubishi Electric Semiconductor

CM1000HA-28H Datasheet Preview

CM1000HA-28H Datasheet

IGBT Module

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MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
U - M4 THD
R (2 TYP.)
K
P
M
C
E
G
E
C
B
S - M8 THD
(2 TYP.)
A
JG
Q
T - DIA.
(4 TYP.)
L
H
F
N
D
E
EC
G
E
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C
1.840
46.75
D 1.73+0.04/–0.02 44.0+1.0/–0.5
E 1.46+0.04/–0.02 37.0+1.0/–0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.79
0.77
0.75
0.61
0.51
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
20.0
19.5
19.0
15.6
13.0
9.0
M8
Dia. 6.5
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-28H is a 1400V
(VCES), 1000 Ampere Single IGBT
Module.
Type
CM
Current Rating
Amperes
1000
VCES
Volts (x 50)
28
Sep.1998




Mitsubishi Electric Semiconductor

CM1000HA-28H Datasheet Preview

CM1000HA-28H Datasheet

IGBT Module

No Preview Available !

MITSUBISHI IGBT MODULES
CM1000HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M8 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
1400
±20
1000
2000*
1000
2000*
5800
8.83~10.8
Mounting Torque, M6 Mounting
– 1.96~2.94
Mounting Torque, M4 Terminal
– 0.98~1.47
Weight
– 1600
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 100mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1000A, VGE = 15V
IC = 1000A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 800V, IC = 1000A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 10000A, VGE = 0V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
– – 2.0 mA
– – 0.5 µA
5.0 6.5 8.0 Volts
– 3.3 4.5 Volts
– 3.1 – Volts
– 5355 –
nC
– – 4.0 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0V, VCE = 10V
VCC = 800V, IC = 1000A,
VGE1 = VGE2 = 15V, RG = 3.3
IE = 1000A, diE/dt = –2000A/µs
IE = 1000A, diE/dt = –2000A/µs
Min. Typ. Max. Units
– – 200 nF
––
70 nF
––
40 nF
– – 800 ns
2000
ns
1200
ns
– – 650 ns
– – 300 ns
– 10.5
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Typ. Max. Units
– 0.022 °C/W
– 0.050 °C/W
– 0.018 °C/W
Sep.1998


Part Number CM1000HA-28H
Description IGBT Module
Maker Mitsubishi Electric Semiconductor
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