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2SK2974 - RF POWER MOS FET

General Description

2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

Key Features

  • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm.
  • High efficiency:55% typ.
  • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX.

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Other Datasheets by Mitsubishi Electric

Part Number Description
2SK2973 RF POWER MOS FET
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Full PDF Text Transcription (Reference)

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MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No.