2SK2974
2SK2974 is RF POWER MOS FET manufactured by Mitsubishi Electric.
DESCRIPTION
2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
FEATURES
- High power gain:Gpe≥8.4d B @VDD=7.2V,f=450MHz,Pin=30d Bm
- High efficiency:55% typ.
- Source case type seramic package (connected internally to source)
2.0 3.50 t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE
MARKING
INDEX MARK TYPE No. LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 17 ±10 10 175 -40 to +110 Unit V V W ˚C ˚C
Tc=25˚C
(Note2)
Note1: Above parameters are guaranteed independently. 2: Solder source pad on Copper Block(14×2.8×2mm)
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol IDSS IGSS VTH Ciss Coss Pout h D Parameter Test conditions VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=7V, IDS=1m A VGS=10V, VDS=0V,f=1MHz VDS=10V, VGS=0V,f=1MHz VDS=7.2V, Pin=1W,f=450MHz Min Limits Typ Max 10 1 1.7 Unit µA µA V p F p F W %
Threshold voltage
1.0 90 95 8 55
7 50
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MOS FET
TYPICAL PERFORMANCE DATA
IDS VS. VDS
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 4.5V 4.0V 3.5V 3.0V 2 2.5V VGS=2.0V 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TC=25˚C 8 5.0V 7 6 5 4 3 VDS=9.6V TC=25˚C
IDS VS. VGS
VDS(V)
VGS(V)
PO, add VS....
