logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

RA07H4452M Mitsubishi Electric

RA07H4452M RoHS Compliance

RA07H4452M Avg. rating / M : star-13

datasheet Download

RA07H4452M Datasheet

Features and benefits


• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• ηT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=2.

Image gallery

RA07H4452M RA07H4452M RA07H4452M

TAGS
RA07H4452M
RoHS
Compliance
RA07H4047M
RA07H4047M-01
RA07H4047M-E01
Mitsubishi Electric
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy