RA03M8894M
Key Features
- Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
- Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
- ηT>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW
- Broadband Frequency Range: 889-941MHz
- Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
- Module Size: 30 x 10 x 5.4 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5
