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M54583P Datasheet, Mitsubishi Electric

M54583P array equivalent, 8 unit 400ma darlington transistor array.

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M54583P Datasheet

Features and benefits

q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta.

Description

M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-curr.

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TAGS

M54583P
UNIT
400MA
DARLINGTON
TRANSISTOR
ARRAY
Mitsubishi Electric

Manufacturer


Mitsubishi Electric

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