2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC Collector current
ICM
IE (Note 2) Emitter current
IEM(Note 2)
PC (Note 3) Maximum collector dissipation
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
— Mounting torque
— Mass
VGE = 0V
VCE = 0V
DC, TC = 110°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
2500
±20
1200
2400
1200
2400
15600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
—
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
QG Total gate charge
VCC = 1250V, IC = 1200A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 1250V, IC = 1200A
—
tr Turn-on rise time
VGE1 = VGE2 = 15V
—
td (off)
tf
Turn-off delay time
Turn-off fall time
RG = 1.6Ω
Resistive load switching operation
—
—
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A,
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
(Note 1)
—
—
—
—
—
—
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
—
6.0
—
2.80
3.15
180
19.8
6.0
8.1
—
—
—
—
2.50
—
350
—
—
0.006
Max
15
7.5
0.5
3.64
—
—
—
—
—
1.60
2.00
2.50
1.00
3.25
1.20
—
0.008
0.016
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
