CM1200HA-50H
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PRE on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HA-50H q IC 1200A q VCES 2500V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190 171 57±0.25
57±0.25
- M8 NUTS
40 124±0.25 140
CIRCUIT DIAGRAM
20.25 41.25 3
- M4 NUTS 79.4 8
- φ 7MOUNTING HOLES
61.5 13
61.5 5.2
15 40
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
Mar. 2001
PRE on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m...
