4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 75°C
Pulse
Conditions
Pulse
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
(Note 1)
(Note 1)
Ratings
1700
±20
1200
2400
1200
2400
6500
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Unit
V
V
A
A
A
A
W
°C
°C
°C
V
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
ICES
VGE(th)
Collector cut-off current
Gate-emitter
threshold voltage
Conditions
VCE = VCES, VGE = 0V, Tj = 25°C
IC = 120mA, VCE = 10V, Tj = 25°C
Limits
Min Typ
——
6.0 7.0
IGES
VCE(sat)
Cies
Coes
Cres
Qg
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VEC (Note 2) Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Irr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
VF (Note 5) Forward voltage
trr (Note 5)
Irr (Note 5)
Qrr (Note 5)
Erec (Note 5)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 1200A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 0.6Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 0.6Ω, Tj = 125°C, Ls = 150nH
Inductive load
IE = 1200A, VGE = 0V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 125°C
(Note 4)
(Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
di/dt = 2900A/µs, Tj = 125°C, Ls = 150nH
Inductive load
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
2.60
2.30
1.00
560
300
220
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. The symbols represent characteristics of the clamp diode (Clamp-Di).
Max
4
8.0
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
3.30
—
—
—
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
A
µC
mJ/pulse
V
µs
A
µC
mJ/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
