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CM1200E4C-34N - IGBT

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200E4C-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(C) C 2(A) 4 2 124±0.25 140±0.5 20±0.1 40±0.2 G E 3(E) 1(K) 3 1 C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.65±0.2 48.8±0.2 10.35±0.2 6 - φ 7 MOUNTING HOLES 61.5±0.
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