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Mitsubishi Electric

CM100TL-12NF Datasheet Preview

CM100TL-12NF Datasheet

IGBT Module

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CM100TL-12NF
MITSUBISHI IGBT MODULES
CM100TL-12NF
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
11
7
13.62
40.78
120
106 ±0.5
17
17
2-φ5.5
MOUNTING HOLES
6-M5 NUTS
10.75
(19.75)
AB
B U VW
12
22
12
23
12
23
12
23
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
UP-1
UP-2
NC
BU
NC
CN-7
CN-5
CN-8
CN-6
NC
N
VP-1
VP-2
V
CN-3
CN-4
WP-1
WP-2
W
CN-1
CN-2
CIRCUIT DIAGRAM
Jun. 2004




Mitsubishi Electric

CM100TL-12NF Datasheet Preview

CM100TL-12NF Datasheet

IGBT Module

No Preview Available !

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 99°C*1
Pulse
Pulse
TC = 25°C
Conditions
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
MITSUBISHI IGBT MODULES
CM100TL-12NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
600
±20
100
200
100
200
540
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Unit
V
V
A
A
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Min.
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V
6
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
VGE = VGES, VCE = 0V
IC = 100A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 300V, IC = 100A, VGE = 15V
VCC = 300V, IC = 100A
VGE1 = VGE2 = 15V
RG = 6.3, Inductive load switching operation
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
Case to fin, Thermal compound Applied (1/6 module)*2
6.3
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Limits
Typ.
7
1.7
1.7
400
2.1
0.085
Max.
1
8
0.5
2.2
15
1.9
0.6
120
100
300
300
120
2.8
0.23
0.41
63
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Jun. 2004


Part Number CM100TL-12NF
Description IGBT Module
Maker Mitsubishi Electric
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CM100TL-12NF Datasheet PDF






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