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Mitsubishi Electric

CM100DY-34A Datasheet Preview

CM100DY-34A Datasheet

IGBT MODULES

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< IGBT MODULES >
CM100DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
Dual (Half-Bridge)
Collector current IC .............….......................… 1 0 0 A
Collector-emitter voltage VCES ......................… 1 7 0 0 V
Maximum junction temperature T j m a x .............. 1 5 0 °C
Flat base Type
Copper base plate
RoHS Directive compliant
UL Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
C2E1
Tr2
INTERNAL CONNECTION
Di1
E2
Di2
C1
Tr1
Publication Date : June.2011
1




Mitsubishi Electric

CM100DY-34A Datasheet Preview

CM100DY-34A Datasheet

IGBT MODULES

No Preview Available !

< IGBT MODULES >
CM100DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
IE
IERM
(Note.1)
(Note.1)
Tj
Tstg
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Junction temperature
Storage temperature
C-E short-circuited
DC, TC=108 °C (Note.2, 4)
Pulse, Repetitive (Note.3)
TC=25 °C (Note.2, 4)
TC=25 °C (Note.2, 4)
Pulse, Repetitive (Note.3)
-
-
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
ICES
IGES
VGE(th)
VCEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note.1)
EC
t (Note.1)
rr
Q (Note.1)
rr
Eon
Eoff
E (Note.1)
rr
rg
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
THERMAL RESISTANCE CHARACTERISTICS
Conditions
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=10 mA, VCE=10 V
IC=100 A ,(Note.5)
VGE=15 V
T j =25 °C
T j =125 °C
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=100 A, VGE=15 V
VCC=1000 V, IC=100 A, VGE=±15 V,
RG=4.8 , Inductive load
IE=100 A (Note.5) , G-E short-circuited
VCC=1000 V, IE=100 A, VGE=±15 V,
RG=4.8 , Inductive load
VCC=1000 V, IC=IE=100 A,
VGE=±15 V, RG=4.8 , T j =125 °C,
Inductive load
Per switch, T c =25 °C
Min.
-
-
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance (Note.2)
Contact thermal resistance (Note.2)
Conditions
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied (Note.6)
Min.
-
-
-
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
m
ec
Item
Mounting torque
Weight
Flatness of base plate
Conditions
Main terminals
Mounting to heat sink
-
On the centerline X, Y
(Note.7)
M 5 screw
M 6 screw
Min.
2.5
3.5
-
-100
Rating
1700
±20
100
200
960
100
200
-40 ~ +150
-40 ~ +125
3500
Unit
V
V
A
W
A
°C
V
Limits
Typ.
-
-
7.0
2.2
2.45
-
-
-
670
-
-
-
-
2.3
-
10
21.3
30
33
0
Max.
1.0
2.0
8.5
2.8
-
24.7
2.8
0.53
-
200
150
550
350
3.0
300
-
-
-
-
-
Unit
mA
μA
V
V
nF
nC
ns
V
ns
μC
mJ
mJ
Limits
Typ.
-
-
0.022
Max.
0.13
0.21
-
Unit
K/W
K/W
K/kW
Limits
Typ.
3.0
4.0
310
-
Max.
3.5
4.5
-
+100
Unit
N·m
N·m
g
μm
Publication Date : June.2011
2


Part Number CM100DY-34A
Description IGBT MODULES
Maker Mitsubishi Electric
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CM100DY-34A Datasheet PDF






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