APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CM100DC-24NFM
HIGH POWER SWITCHING USE
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ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
Symbol
Item
Conditions
Min. Typ. Max. Units
ICES
VGE(th)
Collector cutoff current
Gate-emitter
threshold voltage
VCE=VCES, VGE=0V
IC=10mA, VCE=10V
- - 1 mA
4.5 6.0 7.5
V
IGES
VCE(sat)
Gate leakage current
Collector to emitter
saturationvoltage
±VGE=VGES, VCE=0V
IC=100A *6
Tj=25°C
VGE=15V
Tj=125°C
- - 0.5 μA
- 3.0 4.5 V
- 3.0 -
Cies Input capacitance
Coes Output capacitance
Cres Reverse transfer capacitance
VGE=0V, VCE=10V *6
- - 16
- - 1.3 nF
- - 0.3
QG Total gate charge
VCC=600V, IC=100A, VGE=15V - 450 -
nC
td(on) Turn-on delay time
VCC=600V, IC=100A
- - 100
tr Turn-on rise time
VGE1=VGE2=15V, RG=3.1Ω
- - 50
td(off) Turn-off delay time
Inductive load
- - 250 ns
tf Turn-off fall time
trr *3 Reverse recovery time
Qrr *3 Reverse recovery charge
VEC *3 Emitter-collector voltage
Rth(j-c)Q Thermal resistance
Rth(j-c)R
Rth(c-f) Contact thermal resistance
switching operation
IE=100A
IE=100A, VGE=0V
IGBT part (1/2 module) *1
FWDi part (1/2 module) *1
Case to fin,
Thermal grease applied
(1/2module) *1 *2
- 60 200
- 70 120
- 6 － μC
- 2.0 3.0 V
- - 0.186
- - 0.28
°C/W
- 0.02 -
RG External gate resistance
3.1 - 31 Ω
*1: TC, Tf measured point is just under the chips.
*2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747".
*3: IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel
diode (FWDi).
*4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not
exceed Tjmax rating.
*5: Junction temperature (Tj) should not increase beyond 150°C.
*6: Pulse width and repetition rate should be such as to cause neglible temperature rise.
TENTATIVE
TSM-1860
2-3
