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Mitsubishi Electric

CM1000DU-34NF Datasheet Preview

CM1000DU-34NF Datasheet

IGBT Module

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CM1000DU-34NF
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
q IC ................................................................ 1000A
q VCES .......................................................... 1700V
q Insulated Type
q 2-elements in a pack
APPLICATION
General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N
B : VHR-5N
Tc measured point
(The side of Cu
base plate)
150
137.5±0.25
42
14 14
Tc measured point
(The side of Cu
12 2 base plate)
34.6
+1.0
–0.5
4
A
B
8-f6.5
MOUNTING HOLES
E2 C1
9-M6 NUTS 12
14 14 14 14 14 14
42 42
1.9 ±0.2
34.6
+1.0
–0.5
LABEL
C2
C2E1
E2
C1
C1
CIRCUIT DIAGRAM
Sep. 2004




Mitsubishi Electric

CM1000DU-34NF Datasheet Preview

CM1000DU-34NF Datasheet

IGBT Module

No Preview Available !

MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature*3
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC’ = 104°C
Pulse
TC = 25°C
Pulse
TC’ = 25°C
Conditions
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1700
±20
1000
2000
1000
2000
8900
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Min.
VGE(th) Gate-emitter threshold voltage IC = 100mA, VCE = 10V
5.5
IGES
Gate leakage current
VGE = VGES, VCE = 0V
VCE(sat)
(chip)
Collector-emitter saturation voltage Tj = 25°C
(without lead resistance)
Tj = 125°C
IC = 1000A, VGE = 15V
(Note 4)
R(lead)
Module lead resistance
Ic = 1000A, terminal-chip
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1000V, IC = 1000A, VGE = 15V
td(on)
Turn-on delay time
tr Turn-on rise time
VCC = 1000V, IC = 1000A
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
tf Turn-off fall time
RG = 0.47, Inductive load switching operation
trr (Note 1) Reverse recovery time
IE = 1000A
Qrr (Note 1) Reverse recovery charge
VEC(Note 1) Emitter-collector voltage
(chip)
(without lead resistance)
IE = 1000A, VGE = 0V
Rth(j-c’)Q
Rth(j-c’)R
Rth(c-f)
Thermal resistance*1
Contact thermal resistance*2
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied (1/2 module)
RG External gate resistance
0.47
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) dose not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : The operation temperature is restrained by the permission temperature of female connector.
Limits
Typ.
7
2.2
2.45
0.286
6000
90
2.3
0.016
Max.
1
8.5
5
2.8
220
25
4.7
600
150
900
200
450
3
0.014
0.023
4.7
Unit
mA
V
µA
V
m
nF
nC
ns
ns
µC
V
°C/W
Sep. 2004


Part Number CM1000DU-34NF
Description IGBT Module
Maker Mitsubishi Electric
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CM1000DU-34NF Datasheet PDF






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