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Mitsubishi

PS22A78-E Datasheet Preview

PS22A78-E Datasheet

Intelligent Power Module

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PS22A78-E
MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS22A78-E
TRANSFER-MOLD TYPE
INSULATED TYPE
MAIN FUNCTION AND RATINGS
z 3 phase inverter with N-side open emitter structure
z 1200V / 35A (CSTBT)
APPLICATION
z 0.2~5.5kW / AC400Vrms motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
For P-side
: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
For N-side
: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
Temperature monitoring : Analog output of LVIC temperature
Input interface : 5V line, Schmitt trigger receiver circuit (High Active)
UL Approved : Yellow Card No. E80276
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-NU,NV,NW
Applied between P-NU,NV,NW
TC= 25°C
TC= 25°C, less than 1ms
TC= 25°C, per 1 chip
Ratings
900
1000
1200
35
70
129.9
-20~+150
Unit
V
V
V
A
A
W
°C
CONTROL (PROTECTION) PART
Symbol
VD
VDB
VIN
VFO
IFO
VSC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between
Applied between
Applied between
Applied between
VP1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
UP, VP, WP-VPC, UN, VN, WN-VNC
FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
20
20
-0.5~VD+0.5
-0.5~VD+0.5
1
-0.5~VD+0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol
VCC(PROT)
TC
Tstg
Parameter
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
Storage temperature
Viso Isolation voltage
Note 1: Tc measurement point is described in Fig.1.
Condition
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
(Note 1)
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
Ratings
800
-20~+100
-40~+125
2500
Unit
V
°C
°C
Vrms
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max. Unit
Rth(j-c)Q
Junction to case thermal
Inverter IGBT part (per 1/6 module)
- - 0.77 °C/W
Rth(j-c)F
resistance
(Note 2)
Inverter FWDi part (per 1/6 module)
- - 1.25 °C/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal
conductivity: 1.0W/m•k).
Dec. 2010
1




Mitsubishi

PS22A78-E Datasheet Preview

PS22A78-E Datasheet

Intelligent Power Module

No Preview Available !

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS22A78-E
Fig. 1: TC MEASUREMENT POINT
TRANSFER-MOLD TYPE
INSULATED TYPE
Measurement point for Tc
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
VCE(sat)
VEC
ton
tC(on)
toff
tC(off)
trr
ICES
Collector-emitter saturation
voltage
FWDi forward voltage
VD=VDB = 15V
VIN= 5V, IC= 35A
-IC= 35A, VIN= 0V
Switching times
VCC= 600V, VD= VDB= 15V
IC= 35A, Tj= 125°C, VIN= 05 V
Inductive Load (upper-lower arm)
Collector-emitter cut-off
current
VCE=VCES
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 125°C
Limits
Unit
Min. Typ. Max.
-
-
1.9
2.0
2.6
2.7
V
- 2.2 2.8 V
0.5 1.2 1.9 μs
- 0.6 0.9 μs
- 2.4 3.5 μs
- 0.6 0.9 μs
- 0.5 - μs
-
-
-
-
1
10
mA
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max. Unit
ID Circuit current
IDB Circuit current
ISC Short circuit trip level
Total of VP1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS,
VWFB-VWFS
VD = 15V, VIN = 0V
VD = 15V, VIN = 5V
VD = VDB = 15V, VIN = 0V
VD = VDB = 15V, VIN = 5V
-
-
-
-
- 5.60
-
-
5.60
1.10
mA
- 1.10
-20°CTj125°C, Rs= 48.7(±1%),
Not connecting outer shunt resistors to
(Note 3) 59.5
-
-V
NU,NV,NW terminals
UVDBt
UVDBr
UVDt
UVDr
VFOH
VFOL
tFO
IIN
Vth(on)
Vth(off)
VOT
Control supply under-voltage
protection
Fault output voltage
Fault output pulse width
Input current
ON threshold voltage
OFF threshold voltage
Temperature output
Tj 125°C
P-side
N-side
Trip level
Reset level
Trip level
Reset level
VSC = 0V, FO terminal pull-up to 5V by 10kΩ
VSC = 1V, IFO = 1mA
CFO=22nF
(Note 4)
VIN = 5V
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
LVIC temperature = 85°C
(Note 5)
10.0
10.5
10.3
10.8
4.9
-
1.6
0.7
-
0.8
3.57
-
-
-
-
-
-
2.4
1.0
-
-
3.63
12.0 V
12.5 V
12.5 V
13.0 V
-V
0.95 V
- ms
1.5 mA
3.5 V
-V
3.69 V
Note 3 : Short circuit protection can work for N-side IGBTs only. Isc level can change by sense resistance. For details, please refer the application note for this
DIPIPM or contact us. And in that case, it should be for sense resistor to be larger resistance than the value mentioned above.
Note 4 : Fault signal is output when short circuit or N-side control supply under-voltage protective functions operate. The fault output pulse-width tFO depends on
the capacitance value of CFO. (CFO (typ.) = tFO x (9.1 x 10-6) [F])
Note 5 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level
that user defined, controller (MCU) should stop the DIPIPM. And this output might exceed 5V when temperature rises excessively, so it is recommended
for protection of control part like MCU to insert a clamp Di between supply (e.g. 5V) for control part and this output. Temperature of LVIC vs. VOT output
characteristics is described in Fig.2
Dec. 2010
2


Part Number PS22A78-E
Description Intelligent Power Module
Maker Mitsubishi
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