Datasheet Summary
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES>
PM100PRMS10D0R1S2D0120
FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE
FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package patibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
- 3φ 100A, 1200V Current-sense IGBT for 15kHz switching
- 50A, 1200V Current-sense regenerative brake IGBT
- Monolithic gate drive & protection logic
- Detection, protection & status indication...
