PM100RSD120 Datasheet | Mitsubishi Electric

MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES> PM100PRMS10D0R1S2D0120 FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package patibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. - 3φ 100A, 1200V Current-sense IGBT for 15k Hz switching - 50A, 1200V Current-sense regenerative brake IGBT - Monolithic gate drive & protection logic - Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) - Acoustic noise-less 18.5/22k W class inverter application - UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 20 16.5 135 ±1 120.5 ±0.5 LABEL 9 11 13 15 17 19 10 12 14 16 18 10 10 10 3-2 3-2 3-2 6-2 66.44 4- φ5.5 MOUNTING HOLES 95.5 ±0.5 110 ±1 0.5 ±0.3 51.5 26 2-φ2.54 26 19-...