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PM100PCMS10D0C1S2D0120
FLAFTL-ABTA-SBEASTEYPTEYPE INSIUNLSAUTLEADTEPDACPKAACGKAEGE
PM100CSD120
FEATURE a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse
recovery characteristics. c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM . • 3φ 100A, 1200V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) • Acoustic noise-less 18.
PM100CSD120 Datasheet
