MGFK48G3745 hemt equivalent, ku band internally matched power gan hemt.
* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm
* High efficiency PAE=33% (TYP.) @Pin=42dBm
* Designed for use in Class .
OUTLINE DRAWING
FEATURES
* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm
The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications.
OUTLINE DRAWING
FEATURES
* High voltage operation VDS=24V
* High output power Po=48.3dBm (TYP.) @Pin=42dBm
* High efficiency PAE=33% (TYP.).
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