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MGFK48G3745 - Ku band internally matched power GaN HEMT

Description

The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications.

Features

  • High voltage operation VDS=24V.
  • High output power Po=48.3dBm (TYP. ) @Pin=42dBm.
  • High efficiency PAE=33% (TYP. ) @Pin=42dBm.
  • Designed for use in Class AB linear amplifiers.

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Datasheet preview – MGFK48G3745

Datasheet Details

Part number MGFK48G3745
Manufacturer Mitsubishi
File Size 229.26 KB
Description Ku band internally matched power GaN HEMT
Datasheet download datasheet MGFK48G3745 Datasheet
Additional preview pages of the MGFK48G3745 datasheet.

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Full PDF Text Transcription

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< Ku band internally matched power GaN HEMT > MGFK48G3745 13.75 – 14.5 GHz BAND / 70W DESCRIPTION The MGFK48G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. OUTLINE DRAWING FEATURES  High voltage operation VDS=24V  High output power Po=48.3dBm (TYP.) @Pin=42dBm  High efficiency PAE=33% (TYP.) @Pin=42dBm  Designed for use in Class AB linear amplifiers APPLICATION  Amplifier for Ku-band SATCOM QUALITY  General & Industrial Packaging  Individual case RECOMMENDED BIAS CONDITIONS  Vds=24V  Ids=1.44A  Rg=13.
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