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MGFC4419S - Low Noise GaAs HEMT

General Description

The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers.

This product is provided by die chip form.

Key Features

  • Low noise figure @f=12GHz NFmin. = 0.35dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Low Noise GaAs HEMT > MGFC4419S Die Chip formed product (Space grade) DESCRIPTION The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers. This product is provided by die chip form. FEATURES Low noise figure @f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers QUALITY GRADE Space grade RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA RoHS COMPLIANT MGFC4419S is a RoHS compliant product.