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MGFC40V5258 - C band internally matched power GaAs FET

Description

The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2

5.8 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=5.2.
  • 5.8GHz.
  • High power added efficiency P. A. E. =31% (TYP. ) @f=5.2.
  • 5.8GHz.
  • Low distortion [item -51] IM3=-45dBc (Typ. ) @Po=29.0dBm S. C. L.

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Other Datasheets by Mitsubishi Electric

Part Number Description
MGFC40V5964A 5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC40V5258 5.2 – 5.8 GHz BAND / 10W DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=5.2 – 5.8GHz • High power gain GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz • High power added efficiency P.A.E.=31% (TYP.) @f=5.2 – 5.8GHz • Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION • item 01 : 5.2 – 5.8 GHz band microwave high power amplifier • item 51 : 5.2 – 5.8 GHz band digital radio communication QUALITY • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.