MGF4841CL hemt equivalent, power gaas hemt.
High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ.) @ f=24.3GHz
APPLICATION
K band low noise amplifiers
Fig.1 Fig.1
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITI.
The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified.
Outline Drawing
FEATURES
High gain and High Pout,sat Glp=8.5d.
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